Trench gate IGBT schematic indicating the mesa width (S), gate length (Lg), and the oxide thickness in the MOSFET (tox), cell pitch (W), and the trench depth (DT). Credit: Tokyo …
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Estimated failure rates from single event upsets at the transistor, integrated circuit and device level for the last three semiconductor architectures. Credit: Bharat Bhuva, Vanderbilt University You may not realize …
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US Naval Research Laboratory (NRL) researchers have developed a patent pending technique using niobium nitride (Nb2N) that allows Gallium Nitride (GaN) to be transferred onto almost anything. Credit: U.S. Naval …
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Figure 1. Credit: Fujitsu Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. To realize long-distance, high-capacity …
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A test sample comprised of a thermal chip, a heat spreader and a microcooler demonstrates the efficiency of diamond for removing heat from hotspots in semiconductor electronics. Credit: A*STAR Institute …
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4.0 Analytics, a research and development company in NJIT’s Enterprise Development Center (EDC), has developed a wireless emissions compliance and reporting technology for cars and trucks that alerts automobile owners …
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Credit: Panasonic Panasonic Liquid Crystal Display Co., Ltd., a subsidiary of Panasonic Corporation, today announced it has developed a new model of its IPS liquid crystal panel that achieves a …
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Steve Cain is a senior research support specialist in the Integrated Electronics Engineering Center (IEEC) at Binghamton University. Credit: Jonathan Cohen/Binghamton University While investigating mass transit accidents, especially in air …
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Figure 1 – (a) Top view SEM image after PWFM etch form the n-FETs, and (b) – (d) cross-sectional TEM images of p- and n-FETs at the end of process …
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Energy band diagrams of Si-passivated Ge nFET (b) without interface dipole and (c) with interface dipole at the high-k/SiO2 interface. International Electron Devices Meeting 2016 (IEDM) – Dec. 7, 2016 …
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